M72
ENEA Technology
GROWTH OF NANO-CARBON ARCHITECTURES ON SiC
Technology Readiness Level (TRL)
2
Innovations and Benefits
The carbon nano-structures grow from SiC by CO2 laser annealing of SiC, without using metal catalyst, therefore this process does not require further chemical purification treatments.
Use
By varying the process parameters, it is possible to obtain different carbon nano-structures. Carbon-nanotubes, which grow with an orthogonal orientation respect to the substrate, can be used as miniaturized electron emitters.
Applications and ongoing Activities
Optimization of process parameters to control the nano-tube growth. Study of conditions to obtain mono-layer graphene.
Riferimenti:
S. Botti , L.S. Asilyan, R. Ciardi , F. Fabbri , S. Loreti , A. Santoni , S. Orlanducci, "Catalyst-free growth of carbon nanotubes by laser-annealing of amorphous SiC films", Chem. Phys. Lett. 396, 1–5 (2004)
S. Botti, R. Ciardi, M. L. Terranova, S. Piccirillo, V. sessa, M. Rossi, M. Vittori-Antisari, "Self-assembled carbon nanotubes grown from nanosized carbon particles adsorbed on silicon", Appl. Phys.Lett. 80, 1441-1443 (2002)
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